Infineon’s MOSFET products focus on high performance, reliability, and ease of use, delivering excellent energy efficiency and high power density. The 600V CoolMOS™ 8 Superjunction (SJ) MOSFET is designed for outstanding efficiency, reliability, and cost savings. Seamless switching compatibility between 600V CoolMOS™ 7 and CoolMOS™ 8 (ensuring supply flexibility) and ease of use in the LLC stage were key factors driving Great Wall Power’s selection of this technology.

Christina Guggenberger, Vice President of Infineon Technologies and Head of the High-Voltage Power Switches Product Line, said: “Through our silicon-based power MOSFET technology, Infineon delivers exceptional performance, reliability, and cost-effectiveness to customers, setting industry benchmarks for innovation and excellence worldwide. Our CoolMOS™ 8 technology is a prime example of this commitment, providing strong support for building high-performance power solutions that meet the rigorous requirements of data center applications.”

Dr. Jin, Chief Technology Officer of Great Wall Power, commented: “The deepening collaboration with Infineon allows us to leverage its industry-leading CoolMOS™ 8 Superjunction (SJ) MOSFET technology to enhance our system performance and achieve greater cost-effectiveness. This partnership reflects our unwavering commitment to pursuing innovation and excellence in the industry. We are pleased to see that the power supply solutions (PSUs) we now offer to customers have achieved significant improvements in power density and cost savings.”

Infineon’s newly launched 600V CoolMOS™ 8 leads the global high-voltage superjunction MOSFET technology sector, setting benchmarks for technical standards and cost-effectiveness worldwide. This technology enhances overall system performance and further accelerates the low-carbon transition in applications such as chargers, adapters, solar and energy storage systems, electric vehicle (EV) charging equipment, and uninterruptible power supplies (UPS). Compared to the CFD7 series, the CoolMOS™ 8 Superjunction (SJ) MOSFET reduces gate charge by 18%; compared to the P7 series, gate charge is reduced by 33%. Lower gate charge means less charge is required to switch the MOSFET from the off (non-conducting) state to the on state, enabling more energy-efficient system performance. Additionally, this MOSFET features the fastest turn-off time on the market and offers 14% to 42% improved thermal performance over the previous generation. The 600V CoolMOS™ 8 Superjunction (SJ) MOSFET integrates a fast body diode and is available in packages such as SMD-QDPAK, TOLL, and ThinTOLL-8x8, suitable for a wide range of consumer and industrial applications.

In addition to silicon carbide (SiC) and gallium nitride (GaN) technologies, Infineon’s power MOSFETs set industry benchmarks in performance, reliability, quality, and cost-effectiveness. They not only deliver first-class application results but also help customers develop innovative and cost-effective solutions to meet various stringent requirements.