As a pioneer in wide-bandgap semiconductor technology, Toshiba offers high-performance SiC Schottky Barrier Diodes (SBDs) engineered for high-voltage, low-loss power conversion. Leveraging third-generation SiC chip technology and optimized JBS (Junction Barrier Schottky) structures, these diodes redefine efficiency for industrial, server, and consumer electronics power systems—combining high voltage resistance, fast switching, and robust reliability.
Core Product Advantages (Referenced from Official Specifications)
Toshiba’s SiC SBDs outperform traditional silicon diodes with industry-leading features:
Ultra-Low Forward Voltage: 3rd-gen 650V models achieve a typical forward voltage (V_F) of 1.2V, while 1200V variants hit 1.27V—reducing conduction losses significantly.
Fast Reverse Recovery: Near-zero reverse recovery charge (Q_rr) and recovery time (t_rr) minimize switching losses, ideal for high-frequency power circuits.
High Voltage & Surge Capacity: 650V and 1200V ratings with improved JBS structure, delivering low leakage current (I_r) and high surge current tolerance (I_FSM) for stable operation.
Superior Material Benefits: SiC’s 3.26eV bandgap and 4.9 W/cmK thermal conductivity enable better heat dissipation and higher breakdown field (2.8×10⁶ V/cm) vs. silicon.
Key Product Series
Toshiba’s SiC SBD lineup is tailored to diverse high-power needs, with two flagship ranges:
1. 650V SiC Schottky Barrier Diodes
Target Applications: Server AC-DC converters, industrial PFC (Power Factor Correction) circuits, small-to-medium inverters.
Advantages: Balances low V_F and total capacitance charge, improving system efficiency vs. 2nd-gen models; compatible with 48V server power architectures.
2. 1200V SiC Schottky Barrier Diodes (JBS Structure)
Target Applications: High-power inverters/servos, UPS systems, EV chargers, 3-phase Vienna rectifiers.
Advantages: Optimized JBS structure reduces leakage current and enhances surge current capacity, supporting 5kW+ power systems.
Critical Application Scenarios
Toshiba’s SiC SBDs power efficient conversion across key sectors:
Industrial Equipment: Inverters, servos, and PFC power supplies—lowering losses and enabling compact designs.
Data Centers: 1.6kW+ server power supplies (e.g., 48V LLC resonant converters) for 80+ Platinum efficiency.
Uninterruptible Power Supplies (UPS): Reducing switching noise and improving energy efficiency during grid and battery operation.
Home Appliances: Microwaves—protecting magnetron drive circuits with low noise and high reliability.
Specialized Systems: EV chargers and thermal controllers—leveraging high voltage tolerance and thermal stability.
Genuine Procurement Channel
To source authentic Toshiba SiC Schottky Barrier Diodes with official technical support and warranty, ecparts.cc provides exclusive access to authorized distributors. On the platform, you can:
Verify distributor authorization status (cross-checked with Toshiba’s official database).
Search real-time inventory for hot-selling models (e.g., 650V 3rd-gen SiC SBDs, 1200V JBS diodes).
Access technical datasheets, reference designs (e.g., Vienna rectifier PFC circuits), and bulk order quotes.
Visit the Toshiba SiC Schottky Diodes Page on ecparts.cc to browse specifications, explore application guides, and streamline your procurement process.
