ROHM Power Devices: SiC/GaN & Authorized Distributors

Products: Power Devices

Brand: ROHM

Features: ROHM Power Devices: Power Eco Family Innovation & Global Authorized Distributors

Apply: EV traction inverters, AI server power, industrial UPS, solar converters, automotive HV heaters.

  • Introduction
  • ROHM Products
  • ROHM Distributors
  • News

As the "muscles" of electronic systems, power devices are pivotal to energy efficiency and miniaturization in the pursuit of a carbon-neutral society. ROHM Semiconductor, a pioneer in power semiconductor technology, has built a comprehensive portfolio under thePower Eco Family brand, covering silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) materials. From industry-leading 5th Gen SiC MOSFETs to high-speed GaN HEMTs and reliable IGBT modules, ROHM’s power devices deliver low loss, high heat resistance, and superior switching performance for automotive, industrial, and AI server applications. To secure genuine products, stable inventory, and professional technical support, partnering with ROHM’s authorized distributors is essential — below is a complete guide to sourcing trusted ROHM power devices.

Core Product Lines & Technical Advantages

ROHM’s Power Eco Family integrates four core brands, tailored to diverse power capacity and frequency needs, with proprietary technologies driving industry benchmarks:

1. EcoSiC™ (SiC Power Devices)

As a global leader in SiC mass production, ROHM’s EcoSiC™ series sets new standards for high-voltage, high-efficiency applications, with a complete vertical integration system from wafer to packaging <superscript:5:

  • 5th Gen SiC MOSFETs: Scheduled for mass production in 2025, this series reduces on-resistance by 30% compared to 4th Gen models, achieving industry-top performance. Ideal for EV traction inverters and 800V charging stations, it balances ultra-low switching loss and 1700V high voltage tolerance <superscript:2superscript:3.

  • Trc Drive Pack™ Molded Modules: A breakthrough 2-in-1 SiC module with 1.5x industry-leading power density and 5.7nH low inductance. Its press-fit pin design reduces assembly time, while mass production capacity 30x higher than conventional modules meets automotive manufacturer demand <superscript:2.

  • SiC SBDs: Complementary to SiC MOSFETs, these diodes feature zero reverse recovery time, enhancing efficiency in solar converters and industrial UPS systems. Available in bare chip and discrete packages for flexible integration <superscript:1superscript:6.

2. EcoGaN™ (GaN Power Devices)

Optimized for high-frequency, medium-voltage scenarios, EcoGaN™ HEMTs excel in AI server power and fast-charging applications:

  • GaN HEMTs: Delivers ultra-high-speed switching and low on-resistance, ideal for GPU/CPU multi-phase power supplies in AI servers and 65W+ fast chargers. When paired with ROHM’s dedicated gate drivers, it achieves optimal system efficiency <superscript:5.

3. Si-Based Power Devices (EcoMOS™ & EcoIGBT™)

Mature and cost-effective, these Si-based devices cover mainstream medium-low voltage applications:

  • EcoMOS™ (Super Junction MOSFETs): 600V-1200V models with low on-resistance and fast switching, widely used in industrial inverters and air conditioners. The 4-terminal TO-247-4L package reduces switching loss by 35% vs. 3-pin alternatives <superscript:6.

  • EcoIGBT™ Series: 4th Gen IGBTs with 10μs short-circuit tolerance and AEC-Q101 qualification, suitable for automotive HV heaters and industrial welding machines. Integrated FRDs minimize external component count <superscript:6.

4. Power Modules & Supporting Technologies

  • Intelligent Power Modules (IPMs): Integrate IGBTs, gate drivers, and protection circuits, simplifying design for small industrial motors and home appliances.

  • Nano Power Technologies: Proprietary Nano Cap™, Nano Pulse Control™, and Nano Energy™ technologies enable stable operation with ultra-small capacitors, reducing system size and power consumption for automotive and industrial applications <superscript:4.

Key Technological Advantages

  • Vertical Integration Capability: From SiC wafer (via SiCrystal acquisition) to device packaging, ROHM ensures stable supply and consistent quality, with 8-inch SiC wafer mass production under development <superscript:2superscript:5.

  • Ultra-Low Loss Performance: SiC/GaN devices reduce power loss by 50%+ vs. conventional Si products, while Si-based variants balance efficiency and cost<superscript:3superscript:6.

  • Automotive-Grade Reliability: AEC-Q101 qualification, -40℃~150℃ operating range, and anti-sulfuration design meet harsh automotive environment requirements, accounting for 57% of ROHM’s power device sales <superscript:2superscript:3.